DN2470
DN2470
Initial Release
N-Channel Depletion-Mode
Vertical DMOS FET
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakages
General Description
This low threshold depletion-mode (normally-on)
transistor utilizes an advanced vertical DMOS
structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and with the high input impedance and
positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex's vertical DMOS FET is ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Application
Normally-on switches
Solid state relays
Battery operated systems
Converters
Linear amplifiers
Constant current sources
Telecom
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage
Temperature
Soldering Temperature*
BV
DSX
BV
DGX
±20V
-55°C to +150°C
300°C
* Distance of 1.6mm from case for 10 seconds.
** “Green” Certified Package
Ordering Information
Order Number / Package
TO-252
DN2470K4
DN2470K4-G **
BV
DSX
/ BV
DGX
700V
700V
R
DS(ON)
(max)
42Ω
42Ω
I
DSS
(typ)
500mA
500mA
NR011905
1
Rev. 1
011105
SUPERTEX [ Supertex, Inc ]
