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2N7008-G 参数 Datasheet PDF下载

2N7008-G图片预览
型号: 2N7008-G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型垂直DMOS场效应管 [N-Channel Enhancement-Mode Vertical DMOS FETs]
分类和应用: 晶体小信号场效应晶体管开关
文件页数/大小: 3 页 / 394 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号2N7008-G的Datasheet PDF文件第1页浏览型号2N7008-G的Datasheet PDF文件第3页  
2N7008
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
DRAIN-to-SOURCE breakdown
voltage
GATE threshold voltage
GATE body leakage current
Zero GATE voltage drain current
ON-state DRAIN current
Static DRAIN-to-SOURCE
ON-state resistance
Forward transconductance
Input capacitance
Common SOURCE output
capacitance
Reverse transfer capacitance
Turn-ON time
Turn-OFF time
Diode forward voltage drop
60
1.0
-
-
-
500
-
-
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
100
1.0
500
-
7.5
7.5
-
50
25
5
20
20
1.5
V
V
nA
µA
µA
mA
Ω
mmho
V
GS
= 0V, I
D
= -10µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
GS
= 0V, V
DS
= 50V
V
GS
= 0V, V
DS
= 50V,
T
A
= 125
O
C
V
GS
= 10V, V
DS
≥ 2.0V
DS(ON)
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 10V, I
D
= 0.2A
V
GS
= 0V, V
DS
= 25V,
f = 1.0MHz
pF
ns
V
V
DD
= 30V, I
D
= 200mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 150mA
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Thermal Characteristics
Device
2N7008
Package
TO-92
I
D
(continuous)
*
(mA)
230
I
D
(pulsed)
(A)
1.3
Power Dissipation
@T
C
= 25
O
C
(W)
1.0
θ
ja
O
( C/W)
170
θ
jc
O
( C/W)
125
I
DR
*
(mA)
230
I
DRM
(A)
1.3
Notes:
* I
D
(continuous) is limited by max rated T
j
.
Switching Waveforms and Test Circuit
10V
V
DD
R
L
OUTPUT
90%
INPUT
0V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2