SMD Signal DMOS Transistor (N-Channel)
2N7002
Electrical Characteristics
(T
Ambient
=25ºC)
(Note 3)
Symbol
Description
Gate Threshold Voltage
Drain-Source ON Resistance
Min.
1.1
-
-
-
-
500
200
-
Typ.
1.8
1.2
1.5
0.6
0.075
-
580
0.78
Max.
2.3
1.8
2.1
0.9
0.105
-
-
1.15
Ω
V
mA
mS
V
Unit
V
Conditions
V
DS
=
V
GS
, I
D
=250μA
V
GS
=
10V, I
D
=500mA
V
GS
=
5V, I
D
=50mA
V
GS
=
10V, I
D
=500mA
V
GS
=
5V, I
D
=50mA
V
GS
=
10V, V
DS
≥2V
DS(ON)
V
DS
=
10V, I
D
=500mA
V
GS
=
0V, I
S
=200mA
V
th
R
DS(ON)
V
DS(ON)
I
D(ON)
Drain-Source ON Voltage
On State Drain Current
Forward Transconductance
Drain-Source Diode Forward Voltage (Note 1)
g
FS
V
SD
Dynamic Characteristics
(T
Ambient
=25ºC unless noted otherwise)
Symbol
Description
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time Turn-On Time
Switching Time Turn-Off Time
Min.
-
-
-
-
-
Typ.
47.1
3.5
8.8
8.8
14.8
Max.
-
-
-
-
-
nS
V
DD
=
30V
,
R
L
=
155Ω
I
D
=190mA, V
GS
=10V
pF
V
DS
=
25
V,
V
GS
=
0V,
f=1MHz
Unit
Conditions
C
iss
C
rss
C
oss
t
on
t
off
Note:
(1) Pulse Width≤10us, Duty Cycle≤1%
(2) Package mounted on a glass epoxy PCB 3.94’’ x 3.94’’ x 0.04’’
(3) Pulse Test: Pulse Width≤80μs, Duty Cycle≤1%
Switching Time Test Circuit
Rev. A/JX 2007-12-22
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