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2N7000P013 参数 Datasheet PDF下载

2N7000P013图片预览
型号: 2N7000P013
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92]
分类和应用: 开关晶体管
文件页数/大小: 4 页 / 35 K
品牌: SUPERTEX [ Supertex, Inc ]
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2N7000
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
200mA
I
D
(pulsed)
500mA
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
200mA
I
DRM
500mA
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
60
0.8
3.0
10
1
1
I
D(ON)
R
DS(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Typ
Max
Unit
V
V
nA
µA
mA
mA
Conditions
I
D
= 10µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±15V,
V
DS
= 0V
V
GS
= 0V, V
DS
= 48V
V
GS
= 0V, V
DS
= 48V
T
A
= 125°C
V
GS
= 4.5V, V
DS
= 10V
V
GS
= 4.5V, I
D
= 75mA
V
GS
= 10V, I
D
= 0.5A
V
DS
= 10V, I
D
= 0.2A
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
DD
= 15V, I
D
= 0.5A,
R
GEN
= 25Ω
I
SD
= 0.2A, V
GS
= 0V
ON-State Drain Current
Static Drain-to-Source ON-State Resistance
Static Drain-to-Source ON-State Resistance
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Diode Forward Voltage Drop
75
5.3
5.0
100
60
25
5
10
10
0.85
m
pF
ns
V
Switching Waveforms and Test Circuit
V
DD
R
L
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
OUTPUT
D.U.T.