2N6660/2N6661
Electrical Characteristics
(T
Symbol
Parameter
C
= 25°C unless otherwise specified)
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
t
rr
Drain-to-source break-
down voltage
Gate threshold voltage
2N6660
2N6661
60
90
0.8
-
-
-
-
-
-
-3.8
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
350
-
-
2.0
-5.5
100
10
500
-
5.0
3.0
4.0
-
50
40
10
10
10
-
-
V
V
mV/
O
C
nA
µA
A
Ω
mmho
pF
V
GS
= 0V, I
D
= 10µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 10V, V
DS
= 10V
V
GS
= 5.0V, I
D
= 0.3A
V
GS
= 10V, I
D
= 1.0A
V
GS
= 10V, I
D
= 1.0A
V
DS
= 25V, I
D
= 0.5A
V
GS
= 0V,
V
DS
= 24V,
f = 1.0MHz
V
DD
= 25V, I
D
= 1.0A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 1.0A
V
GS
= 0V, I
SD
= 1.0A
V
GS(th)
change with temperature
Gate body leakage current
Zero gate voltage drain current
ON-state drain current
All
Static drain-to-source
ON-state resistance
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON time
Turn-OFF time
Diode forward voltage drop
Reverse recovery time
2N6660
2N6661
-
1.5
-
-
-
170
-
-
-
-
-
-
-
ns
V
ns
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Thermal Characteristics
Device
2N6660
2N6661
Package
TO-39
TO-39
I
D
(continuous)
*
(mA)
410
350
I
D
(pulsed)
(A)
3.0
3.0
Power Dissipation
@T
C
= 25
O
C
(W)
6.25
6.25
θ
jc
O
( C/W)
20
20
θ
ja
O
( C/W)
125
125
I
DR
*
(mA)
410
350
I
DRM
(A)
3.0
3.0
Notes:
* I
D
(continuous) is limited by max rated T
J
.
Switching Waveforms and Test Circuit
10V
V
DD
R
L
OUTPUT
90%
INPUT
0V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
SUPERTEX [ Supertex, Inc ]
