ST1N60
P
OWER
MOSFET
ORDERING INFORMATION
Part Number
Package
.................ST1N60-251...........................................TO-251
.................ST1N60-252...........................................TO-252
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
.
CST1N60
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250 A)
Drain-Source Leakage Current
(V
DS
= 600 V, V
GS
= 0 V)
(V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 )
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 0.6A) *
Forward Transconductance (V
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
50 V, I
D
= 0.5A) *
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 300 V, I
D
= 1.0 A,
V
GS
= 10 V,
R
G
= 18 ) *
(V
DS
= 400 V, I
D
= 1.0 A,
V
GS
= 10 V)*
Symbol
V
(BR)DSS
I
DSS
0.1
0.3
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
0.5
210
28
4.2
8
21
18
24
8.5
1.8
4
4.5
7.5
14
2.0
100
100
4.0
8.0
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
nA
nA
V
Min
600
Typ
Max
Units
V
mA
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I
S
= 1.0 A, V
GS
= 0 V,
d
IS
/d
t
= 100A/µs)
V
SD
t
on
t
rr
**
350
1.5
500
V
ns
ns
* Pulse Test: Pulse Width 300µs, Duty Cycle
** Negligible, Dominated by circuit inductance
2%
Page 2
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