IRF730
P
OWER
MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25 .
CIRF730
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
A)
I
DSS
25
)
I
GSSF
I
GSSR
V
GS(th)
A)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
(V
DD
= 200 V, I
D
= 6 A,
R
G
= 9.1 , V
GS
= 10 V) (Note 4)
t
r
t
d(off)
t
f
(V
DS
= 320V, I
D
= 6A
V
GS
= 10 V) (Note 4)
Q
g
Q
gs
Q
gd
L
D
L
S
2.9
515
185
15
7
11
19
10
9.5
2
3
4.5
7.5
720
260
30
10
20
40
20
1.0
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
2.0
100
100
-100
4.0
nA
nA
V
A
Drain-Source Leakage Current
(V
DS
= 400V, V
GS
= 0 V)
(V
DS
= 400V, V
GS
= 0 V, T
J
= 125
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= -20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 3A) (Note 4)
Forward Transconductance (V
DS
= 50V, I
D
= 3 A) (Note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
Reverse Recovery Time
Diode Forward Voltage
Note
(1)
(2)
(3)
(4)
Repetitive rating; pulse width limited by max. junction temperature
V
DD
= 50V, starting T
J
= 25
I
SD
4.5A, di/dt
Pulse Test: Pulse Width
, L=24mH, R
G
= 25 , I
AS
= 4.5A
V
(BR)DSS
, T
J
2%
150
300µs, Duty Cycle
75A/µs, V
DD
I
F
= 6A, di/dt = 100A/µs , T
J
= 25
(Note 4)
I
S
= 6A, V
GS
= 0 V, T
J
= 25
(Note 4)
Q
rr
t
on
t
rr
V
SD
1.6
**
270
1.5
ns
V
µC
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
Gate-Source Leakage Current-Forward
Symbol
V
(BR)DSS
Min
400
Typ
Max
Units
V
** Negligible, Dominated by circuit inductance
Page 2
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