P
OWER
MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) VDD = 50V, ID = 6A
(2) Pulse Width and frequency is limited by T
J(max)
and thermal response
T
J
= 25
E
AS
JC
JA
IRF6N60
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
6.0
18
±20
±40
125
45
Unit
A
V
V
W
Continue
Non-repetitive
T
J
, T
STG
-55 to 150
mJ
180
1.0
62.5
260
/W
(V
DD
= 100V, V
GS
= 10V, I
L
= 6A, L = 10mH, R
G
= 25 )
T
L
ORDERING INFORMATION
Part Number
....................IRF6N60FP
Package
TO-220
Full Pak
IRF6N60...............................................TO-220
TEST CIRCUIT
Test Circuit – Avalanche Capability
Page 2
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
