IRF6N40
P
OWER
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
12
3
Normalized Drain-to-Source Resistance,
Rdon
10
Drain Current, Id (A)
Tc = 25 C
Pulse width = 20 us
Vgs = 10V (Top), 8V, 7V, 6V
5.5V, 5V, 4.5V (Bottom)
2.5
Vgs = 10 V
Id = 5.5 A
8
2
6
1.5
SmartStar Technology, Inc.
2
4
1
2
0.5
0
0.1
1
Drain-to-Source Voltage, Vds (V)
10
0
-60
-20
20
60
100
140
Junction Tem pe rature , Tj (C)
Figure
1.
Id versus Vds Curve
10000
Figure
2.
Rdon versus Tj Curve
12
Gate-to-Source Voltage, Vgs (V)
10
Vds = 320 V
Id = 5.5 A
1000
Capacitor (pF)
Ciss =Cgd+Cgs
8
Cos s=Cds+Cgd
100
6
4
10
2
Tc = 25 C
f = 1 MHz
Vgs = 0 V
Crss=Cgd
0
0.00
1
10.00
20.00
30.00
1.0
10.0
100.0
1000.0
Total Gate Charge, Qg (nC)
Drain-to-Source Voltage , Vds (V)
Figure
3.
Vgs versus Qg Curve
Figure
4.
Capacitor versus Vds Curve
10
Normalized thermal impedance, Zthjc
Duty Cycle = 0.5 (Top), 0.2, 0.1, 0.05,
0.02, 0.01, Single Pulse (Bottom)
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (second)
Figure
5.
Transient thermal impedance Curve
Page 3
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