IRF4N60
POWER MOSFET
ORDERING INFORMATION
Part Number
IRF4N60FP
Package
TO-220 Full Package
....................IRF4N60..............................................TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
.
CIRF4N60
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250 A)
Drain-Source Leakage Current
(V
DS
=600 V, V
GS
= 0 V)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 2.0A) *
Forward Transconductance (V
DS
= 50 V, I
D
= 2.0 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 300 V, I
D
= 4.0 A,
V
GS
= 10 V,
R
G
= 9.1 ) *
(V
DS
= 480 V, I
D
= 4.0 A,
V
GS
= 10 V)*
Symbol
V
(BR)DSS
I
DSS
0.1
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
2.0
100
-100
4.0
nA
nA
V
Min
600
Typ
Max
Units
V
mA
................1.5...............
.4
2
2.5
520
125
8.0
12
7.0
19
10
5.0
2.7
2.0
4.5
7.5
730
180
20
20
10
40
20
10
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I
S
= 4.0 A,
d
IS
/d
t
= 100A/µs)
V
SD
t
on
t
rr
**
655
1.5
V
ns
ns
* Pulse Test: Pulse Width 300µs, Duty Cycle
** Negligible, Dominated by circuit inductance
2%
Page 2
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
