2SA1797
Power Transistor (-50V, -3A)
Features
1) Low saturation voltage. V
CE (sat)
= -0.35V (Max.) at I
C
/ I
B
= -1A /
-
50mA.
2) Excellent DC current gain characteristics.
4) Complements the 2SA1797.
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
-
50
-
50
-
Unit
V
V
V
A (DC)
A (Pulse)
6
-3
-5
*
1
0.5
2SA1797
P
C
Tj
Tstg
2
*2
1
*3
150
-55~
150
SOT-89
or larger
.
W
Junction temperature
Storage temperature
*1 Single pulse, Pw=10ms
*2 When mounted on a 40x 40x 0.7mm ceramic board.
*3 Printed circuit board 1.7mm thick, collector plating 1c
Packaging specifications and h
FE
2SA1797
SOT-89
PQ
h
FE
Marking
AG
Code
T100
Basic ordering unit (Pieces)
1000
*Denotes hF E
1:EMITTER
2:COLLECTOR
3:BASE
Type
Package
Electrical characteristics
(Ta=25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
*Measured using pulse current
2SA1797
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
82
200
36
-0.15
Min.
-50
-50
-6
-0.1
-0.1
-0.35
270
MHz
pF
Typ.
Max.
Unit
V
V
V
µA
µA
V
I
C -
50uA
I
C -
1 mA
I
E -
50uA
V
CB -
50V
V
EB -
5V
I
C
/I
B -
1A/-50mA
V
CE
/I
C -
2V/-0.5A
V
CE -
2V, I
E
0.5A, f 100MHz
V
CB -
10V, I
E
0A,
f
*
*
Conditions
1
MHz
1
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
