THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
TO-220/ITO-220
TO-262/TO-263
Junction to Ambient
Junction to Case
TO-220
0.85
θJC
°C/W
ITO-220
2.6
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VGS=0V, ID=250μA
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS
IDSS
600
V
1
µA
Drain-Source Leakage Current
Gate- Source Leakage Current
VDS=600V, VGS=0V
Forward
Reverse
V
G=30V, VDS=0V
100 nA
-100 nA
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=5A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.76 0.9
Ω
CISS
COSS
CRSS
1570
166
18
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
23
69
ns
ns
VDD =300V, ID =10A,
RG =25Ω (Note 1, 2)
Turn-On Rise Time
Turn-Off Delay Time
144
77
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
44
VDS=480V, ID=10A,
VGS=10V (Note 1, 2)
Gate-Source Charge
QGS
QGD
6.7
18.5
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0 V, IS =10A
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
1.4
V
A
IS
10
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
40
A
Reverse Recovery Time
trr
450
ns
VGS=0V, IS=10A,
dIF/dt =100 A/μs (Note 1)
Reverse Recovery Charge
QRR
4.2
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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