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XZTNI53W-1 参数 Datasheet PDF下载

XZTNI53W-1图片预览
型号: XZTNI53W-1
PDF下载: 下载PDF文件 查看货源
内容描述: [EMITTER IR 940NM 50MA SMD]
分类和应用:
文件页数/大小: 4 页 / 248 K
品牌: SUNLED [ SUNLED CORPORATION ]
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Part Number: XZTNI53W-1  
1.6 x 0.8 mm Infrared Emitting Diode  
Features  
● Long life and robust package  
● Standard Package: 2,000pcs/ Reel  
● MSL (Moisture Sensitivity Level): 3  
● Halogenꢀfree  
● RoHS compliant  
Absolute Maximum Ratings  
(TA=25°C)  
TNI  
(GaAs)  
Operating Characteristics  
(TA=25°C)  
TNI  
(GaAs)  
Unit  
Unit  
V
Forward Voltage (Typ.)  
(IF=20mA)  
Reverse Voltage  
Forward Current  
VR  
5
V
VF  
VF  
IR  
1.2  
1.6  
10  
IF  
50  
mA  
Forward Voltage (Max.)  
(IF=20mA)  
V
Forward Current (Peak)  
1/100 Duty Cycle  
10us Pulse Width  
iFS  
1200  
mA  
mW  
°C  
Reverse Current (Max.)  
(VR=5V)  
ꢁA  
Power Dissipation  
PD  
TA  
90  
Wavelength of Peak  
Emission CIE127ꢀ2007* (Typ.)  
(IF=20mA)  
λP  
940*  
nm  
Operating Temperature  
Storage Temperature  
ꢀ40 ~ +85  
ꢀ40 ~ +85  
Tstg  
Spectral Line Full Width  
At HalfꢀMaximum (Typ.)  
(IF=20mA)  
λ  
50  
90  
nm  
pF  
A Relative Humidity between 40% and 60% is recommended in  
ESDꢀprotected work areas to reduce static build up during assembly  
process (Reference JEDEC/JESD625ꢀA and JEDEC/JꢀSTDꢀ033)  
Capacitance (Typ.)  
(VF=0V, f=1MHz)  
C
Radiant Intensity  
CIE127ꢀ2007*  
(Po=mW/sr)  
Wavelength  
CIE127ꢀ2007*  
Viewing  
Angle  
2θ 1/2  
Part  
Number  
Emitting  
Material  
Lensꢀcolor  
nm  
λP  
@20mA  
min.  
typ.  
1.2  
0.8*  
2.8  
1.8*  
XZTNI53Wꢀ1  
GaAs  
Water Clear  
940*  
150°  
*Radiant Intensity value and wavelength are in accordance with CIE127ꢀ2007 standards.  
Dec 07,2020  
XDSA8991 V5ꢀX Layout: Maggie L.  
P. 1/4