SMS66
Preliminary Information
ABSOLUTE MAXIMUM RATINGS
Temperature Under Bias ...................... -55
°
C to 125
°
C
Storage Temperature............................ -65
°
C to 150
°
C
Terminal Voltage with Respect to GND:
VDD Supply Voltage ..........................-0.3V to 6.0V
12VIN Supply Voltage......................-0.3V to 15.0V
All Others ................................-0.3V to V
DD
+ 0.7V
Output Short Circuit Current ............................... 100mA
Lead Solder Temperature (10 secs) .................... 300
°
C
Note - The device is not guaranteed to function outside its operating
rating. Stresses listed under Absolute Maximum Ratings may cause
permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions
outside those listed in the operational sections of the specification is
not implied. Exposure to any absolute maximum rating for extended
periods may affect device performance and reliability. Devices are
ESD sensitive. Handling precautions are recommended.
RECOMMENDED OPERATING CONDITIONS
Temperature Range (Industrial)...........–40
°
C to +85
°
C
(Commercial) ............–5
°
C to +70
°
C
VDD Supply Voltage .................................. 2.7V to 5.5V
EEPROM Write Supply Voltage
1
…….....…3.0V to 5.5V
12VIN Supply Voltage
2
............................ 8.0V to 15.0V
VIN ............................................................ GND to VDD
VOUT ...................................................... GND to 15.0V
Package Thermal Resistance (θ
JA
)
48 Lead TQFP……………………………….…80
o
C/W
Moisture Classification Level 1 (MSL 1) per J-STD- 020
Note 1 – During an EEPROM memory array or Configuration
Register Write, the supply voltage minimum is 3.0V.
Note 2 – Range depends on internal regulator set to 3.6V or 5.5V.
DC OPERATING CHARACTERISTICS
(Over recommended operating conditions, unless otherwise noted. All voltages are relative to GND.)
Symbol
Parameter
Notes
Min.
Typ.
Max
VDD
Low Range Supply Voltage
Note 1
Note 2. Internally
regulated to 5.5V
Note 2. Internally
regulated to 3.6V
12VIN floating
VDD floating
0
0
-0.005
-0.005
0
0
-0.005
-0.005
PT
UV1
PT
UV2
Unit
V
V
2.7
10
7
3
3
5.5
15
14
5
5
4XV
REF
4XV
REF
PT
UV
PT
OV
+0.005
+0.005
4XV
REF
4XV
REF
+0.005
+0.005
12VIN
High Range Supply Voltage
Power Supply Current from
VDD
Power Supply Current from
12VIN
Programmable Threshold for
OV1 condition
Programmable Threshold for
OV2 condition
Programmable UV Threshold
Accuracy
Programmable OV Threshold
Accuracy
Programmable Threshold for
UV1 condition
Programmable Threshold for
UV2 condition
Programmable UV1
Threshold Accuracy
Programmable UV2
Threshold Accuracy
I
DD
I
12VIN
PT
OV1
PT
OV2
PT
OV1ACC
PT
OV2ACC
PT
UV1
PT
UV2
PT
UV1ACC
PT
UV2ACC
mA
mA
V
V
V
V
V
V
V
V
Note 1 – During an EEPROM memory array or Configuration Register Write, the supply voltage minimum is 3.0V.
Note 2 – Range depends on internal regulator set to 3.6V or 5.5V.
Summit Microelectronics, Inc
2070 1.0 7/16/03
6
SUMMIT [ SUMMIT MICROELECTRONICS, INC. ]
