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SMS45GCR00 参数 Datasheet PDF下载

SMS45GCR00图片预览
型号: SMS45GCR00
PDF下载: 下载PDF文件 查看货源
内容描述: 四可编程精密梯级定序和监控控制器与4K位非易失存储器 [Quad Programmable Precision Cascade Sequencer and Supervisory Controller with 4k-Bit Nonvolatile Memory]
分类和应用: 存储监控控制器
文件页数/大小: 20 页 / 985 K
品牌: SUMMIT [ SUMMIT MICROELECTRONICS, INC. ]
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SMS45
Preliminary Information
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ...................... –55°C to 125°C
Storage Temperature ............................. –65°C to 150°C
Lead Solder Temperature (10s) ........................... 300 °C
Terminal Voltage with Respect to GND:
V
0
, V
1
, V
2
, and V
3
......... –0.3V to 6.0V
All Others ....................... –0.3V to 6.0V
Junction Temperature.......................…….....…...150°C
ESD Rating per JEDEC……………………..….…..2000V
Latch-Up testing per JEDEC………..…….......…±100mA
*Note
-
Stresses beyond the listed Absolute Maximum Ratings may
cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions
outside those listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for extended
periods may affect device performance and reliability.
RECOMMENDED OPERATING CONDITIONS
Industrial Temperature Range............... –40ºC to +85ºC.
Commercial Temperature Range..............–5ºC to +70ºC.
V
SUPPLY
Supply Voltage............................2.7V to 5.5V
V
SUPPLY
=
Device supply voltage provided by the
highest V
X
input.
Package Thermal Resistance (θJA)
16 Lead SSOP…………………….………….…23
o
C/W
Moisture Classification Level 1 (MSL 1) per J-STD- 020
RELIABILITY CHARACTERISTICS
Data Retention………………….…………..…..100 Years
Endurance……………………….…..…….100,000 Cycles
DC OPERATING CHARACTERISTICS
(Over
Recommended Operating Conditions; Voltages are relative to GND)
Symbol
Parameter
Notes
1V Min. refers to a valid reset out-
put being generated
Min.
1.0
Typ.
Max.
5.5
Unit
V
V
SUPPLY
Operating supply voltage
Memory read/write operations: at
least one of the V
X
inputs must be
at or above V
SUPPLY
min.
VDD_CAP = 5.5V; V
0
trip point 4.7V; V
1
, V
2
,
V
3
= GND; MR# = V
CC
; all outputs
floating
2.7
5.5
V
200
400
3
µA
mA
V
V
%
mV
I
CC
Supply current
V
PTH
Programmable threshold
Range range (low range)
V
PTH
Programmable threshold
Range range (high range)
V
PTHACC
V
HYST
V
OL
V
IL
V
IH
Programmable threshold
Accuracy
V
RST
hysteresis
Low voltage output
Configuration register or memory
access
Reset threshold voltage range V
0
to V
3
(5mV increments)
Reset threshold voltage range V
0
to V
3
(15mV increments)
V
PTH
is the programmed threshold
setpoint within the V
PTH
Range
See Note 1 below
I
SINK
= 1mA, V
VDD_CAP
2.7V
I
SINK
= 200µA, V
VDD_CAP
= 1.0V
0.6
1.8
–1.0
V
PTH
30
1.875
5.625
1.0
0.3
0.3
0.6
0.7
×
V
CC
V
V
V
V
Input threshold
Note 1: Low Range Hysteresis = 4.2 X (Vtrip - 0.5 volts) mV. For Vtrip = 1.0 volts, Hysteresis = 2.1 mV (0.21 %),
High Range Hysteresis = 12.6 X (Vtrip -0.5 volts) mV. For Vtrip = 5.0 volts, Hysteresis = 56.7 mV (1.13%).
4
2079 1.2 05/24/04
SUMMIT MICROELECTRONICS, Inc.