SMP9317
RELIABILITY CHARACTERISTICS (over recommended operating conditions unless otherwise specified)
Symbol
VZAP
ILTH
TDR
NEND
Parameter
ESD Susceptibility
Latch-Up
Data Retention
Endurance
Min
2000
100
100
1,000,000
Max
Unit
V
mA
Years
Stores
Test Method
MS-883, TM 3015
JEDEC Standard 17
MS-883, TM 1008
MS-883, TM 1033
2031 PGM T2.0
DC ELECTRICAL CHARACTERISTICS
V
DD
= +2.7V to +5.5V, V
H
= V
DD
, V
L
= 0V, T
A
= -40°C to +85°C, Unless otherwise specified
Symbol
I
DD
I
SB
I
IH
I
IL
V
IH
V
IL
Notes:
1. I
DD
is the supply current drawn while the EEPROM is being updated. I
DD
does not include the current that flows through the Reference
resistor chain.
2.
CS,
UP/DN and
INC
have internal pull-up resistors of approximately 200kΩ. When the input is pulled to ground the resulting output
current will be V
DD
/200kΩ.
3. TCV
OUT
is guaranteed but not tested.
Parameter
Supply Current
during store, note 1
Supply Standby Current
Input Leakage Current
Input Leakage Current, note 2
High Level Input Voltage
Low Level Input Voltage
Conditions
CS = V
IL
to V
IH
W/INC HI
CS = V
IH
V
IN
= V
DD
V
IN
= 0V
Min
Typ
1.0
Max
Units
mA
100
10
-25
2
V
DD
0.8
µA
µA
µA
V
V
2031 PGM T4.1
V
DD
≥
4.5V
0
2031-04 12/4/98
4
SUMMIT [ SUMMIT MICROELECTRONICS, INC. ]
