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VN5010AK-E 参数 Datasheet PDF下载

VN5010AK-E图片预览
型号: VN5010AK-E
PDF下载: 下载PDF文件 查看货源
内容描述: 模拟电流检测用于汽车应用的高侧驱动器 [High side driver with analog current sense for automotive applications]
分类和应用: 外围驱动器驱动程序和接口接口集成电路光电二极管PC
文件页数/大小: 31 页 / 619 K
品牌: STMICROELECTRONICS [ ST ]
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Application information  
VN5010AK-E  
3.1.2  
Solution 2 : diode (D  
) in the ground line  
GND  
A resistor (R  
inductive load.  
=1k) should be inserted in parallel to D if the device drives an  
GND  
GND  
This small signal diode can be safely shared amongst several different HSDs. Also in this  
case, the presence of the ground network will produce a shift (600mV) in the input  
threshold and in the status output values if the microprocessor ground is not common to the  
device ground. This shift will not vary if m.ore than one HSD shares the same diode/resistor  
network.  
3.2  
3.3  
Load dump protection  
D is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the  
ld  
V
max DC rating. The same applies if the device is subject to transients on the V line  
CC  
CC  
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.  
MCU I/Os protection  
If a ground protection network is used and negative transient are present on the V line,  
CC  
the control pins will be pulled negative. ST suggests to insert a resistor (R ) in line to  
prot  
prevent the µC I/Os pins to latch-up.  
The value of these resistors is a compromise between the leakage current of µC and the  
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC  
I/Os.  
-V  
/I  
R  
(V  
-V -V  
) / I  
CCpeak latchup  
prot  
OHµC IH GND IHmax  
Calculation example:  
For V  
= - 100V and I  
20mA; V  
4.5V  
CCpeak  
latchup  
OHµC  
5kR  
180kΩ  
prot  
Recommended values: R  
=10k, C  
=10nF.  
EXT  
prot  
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