TL062 - TL062A - TL062B
ELECTRICAL CHARACTERISTICS
V
CC
=
±
15V, T
amb
= 25
o
C (unless otherwise specified)
Symbol
V
io
Parameter
Input Offset Voltage (R
s
= 50Ω)
o
T
amb
= 25 C
T
min
.
≤
T
amb
≤
T
max.
Temperature Coefficient of Input
Offset Voltage (R
s
= 50Ω)
Input Offset Current *
o
T
amb
= 25 C
T
min
.
≤
T
amb
≤
T
max.
Input Bias Current *
T
amb
= 25
o
C
T
min.
≤
T
amb
≤
T
max
.
Input Common Mode Voltage
Range
Output Voltage Swing (R
L
= 10kΩ)
o
T
amb
= 25 C
T
min
.
≤
T
amb
≤
T
max
.
Large Signal Voltage Gain
(R
L
= 10kΩ, V
o
=
±
10V)
o
T
amb
= 25 C
T
min
.
≤
T
amb
≤
T
max
.
Gain Bandwidth Product
o
(T
amb
= 25 C, R
L
= 10kΩ
C
L
= 100pF)
Input Resistance
Common Mode Rejection Ratio
(R
s
= 50Ω)
Supply Voltage Rejection Ratio
(R
s
= 50Ω)
Supply Current (Per Amplifier)
o
(T
amb
= 25 C, no load, no signal)
Channel Separation
(A
v
= 100, T
amb
= 25
o
C)
Total Power Consumption
(Each Amplifier)
(T
amb
= 25
o
C, no load, no signal)
80
80
±11.5
TL062M
Min.
Typ. Max.
3
6
15
Min.
TL062I
Typ. Max. Min.
3
6
9
TL062C
Typ. Max.
3
15
20
µV/
o
C
Unit
mV
DV
io
I
io
10
5
100
20
200
50
±11.5
10
5
100
10
200
20
±11
10
5
200
5
400
10
pA
nA
pA
nA
V
V
I
ib
30
+15
-12
27
30
+15
-12
27
30
+15
-12
27
V
icm
V
OPP
20
20
20
20
20
20
A
vd
V/mV
4
4
6
4
4
6
3
3
6
MHz
1
10
12
GBP
1
10
80
80
250
12
1
10
12
70
70
250
76
dB
95
200
120
mW
250
µA
dB
Ω
dB
R
i
CMR
SVR
I
cc
V
O1
/V
O2
P
D
86
95
200
120
86
95
200
120
6
7.5
6
7.5
6
7.5
* Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive.
Pulse techniques must be used that will maintain the junction temperature as closes to the ambient temperature as possible.
ELECTRICAL CHARACTERISTICS
(continued)
V
CC
=
±
15V, T
amb
= 25
o
C
Symbol
SR
t
r
K
OV
e
n
Parameter
Slew Rate (V
i
= 10V, R
L
= 10kΩ, C
L
= 100pF, A
V
= 1)
Rise Time (V
i
= 20mV, R
L
= 10kΩ, C
L
= 100pF, A
V
= 1)
Overshoot Factor (V
i
= 20mV, R
L
= 10kΩ, C
L
= 100pF, A
V
= 1)
(see figure 1)
Equivalent Input Noise Voltage
(R
s
= 100Ω, f = 1KHz)
TL062C,I,M
Min.
1.5
Typ.
3.5
0.2
10
42
nV
Hz
√
Max.
Unit
V/µs
µs
%
3/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
