®
TIP110/112
TIP115/117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
2
3
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The
TIP110
and
TIP112 are
silicon
Epitaxial-Base NPN transistors in monolithic
Darlington configuration mounted in Jedec
TO-220 plastic package. They are intented for
use in medium power linear and switching
applications.
The complementary PNP types are TIP115 and
TIP117.
TO-220
1
INTERNAL SCHEMATIC DIAGRAM
R
1
T yp.= 7K
Ω
R
2
T yp.= 230
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
t ot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
cas e
≤
25
o
C
o
T
amb
≤
25 C
Storage T emperature
Max. O perating Junction Temperature
TIP110
TIP115
60
60
5
2
4
50
50
2
-65 to 150
150
Value
TIP112
TIP117
100
100
V
V
V
A
A
mA
W
W
o
o
Uni t
C
C
* For PNP types voltage and current values are negative
June 1999
1/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
