STPS20H100CT/CF/CG/CG-1
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB, D2PAK, I2PAK)
Fig. 4: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB).
IM(A)
IM(A)
140
200
180
160
140
120
100
120
80
Tc=50°C
Tj=50°C
100
80
60
Tc=75°C
Tj=75°C
40
60
40
20
Tc=125°C
IM
Tj=125°C
IM
20
t
t
t(s)
δ=0.5
t(s)
δ=0.5
0
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, D2PAK, I2PAK).
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.8
0.8
δ = 0.5
δ = 0.5
0.6
0.6
δ = 0.2
0.4
δ = 0.2
0.4
δ = 0.1
T
δ = 0.1
0.2
Single pulse
0.2
Single pulse
tp(s)
tp
=tp/T
δ
tp(s)
0.0
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E-2
1E-1
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
IR(µA)
1E+4
1000
F=1MHz
Tj=25°C
Tj=150°C
1E+3
Tj=125°C
500
200
1E+2
Tj=100°C
1E+1
1E+0
Tj=25°C
1E-1
VR(V)
VR(V)
1E-2
100
0
10 20 30 40 50 60 70 80 90 100
1
2
5
10
20
50
100
3/7
STMICROELECTRONICS [ ST ]
