Characteristics
STPS20H100C
1
Characteristics
Table 1.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
T
j
dV/dt
1.
dPtot
---------------
dTj
Absolute ratings (limiting values, per diode)
Parameter
Repetitive peak reverse voltage
RMS forward current
Average
forward current
δ
= 0.5
TO-220AB
D
2
PAK / I
2
PAK
TO-220FPAB
T
c
= 160° C Per diode
T
c
= 145° C Per device
Value
100
30
10
A
20
250
1
3
10800
-65 to + 175
175
10000
A
A
A
W
°C
°C
V/µs
Unit
V
A
Surge non repetitive forward current t
p
= 10 ms sinusoidal
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
(1)
Critical rate of rise of reverse voltage
t
p
= 2 µs square F= 1 kHz
t
p
= 100 µs square
t
p
= 1 µs T
j
= 25° C
1
<
--------------------------
condition to avoid thermal runaway for a diode on its own heatsink
Rth
(
j
–
a
)
Table 2.
Symbol
Thermal resistance
Parameter
TO-220AB / D
2
PAK / I
2
PAK
TO-220FPAB
Per diode
Per diode
Total
Total
Coupling
Coupling
Value
1.6
°C/W
4
0.9
°C/W
TO-220FPAB
TO-220AB / D
2
PAK / I
2
PAK
3.2
0.15
°C/W
TO-220FPAB
2.5
Unit
R
th(j-c)
Junction to case
TO-220AB / D
2
PAK / I
2
PAK
R
th(c)
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode
1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
2/11
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