STPS2045CT/CF/CG
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
Fig. 2:
Average current versus
temperature (δ=0.5, per diode).
ambient
PF(av)(W)
8
7
6
5
4
3
2
1
0
0
1
2
3
4
IF(av) (A)
5
6
7
8
9
δ
=tp/T
T
IF(av)(A)
δ
= 0.1
δ
= 0.05
δ
= 0.2
δ
= 0.5
12
Rth(j-a)=Rth(j-c)
10
δ
=1
TO-220AB
D PAK
8
6
4
2
T
Rth(j-a)=15°C/W
ISOWATT220AB
tp
10
11 12
0
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
175
0
25
Fig. 3-1:
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB and D
2
PAK).
Fig. 3-2:
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB).
IM(A)
140
120
100
80
60
40
20
0
1E-3
I
M
t
IM(A)
100
80
60
Tc=75°C
Tc=100°C
Tc=75°C
40
20
0
1E-3
I
M
t
δ
=0.5
Tc=100°C
Tc=125°C
δ
=0.5
Tc=125°C
t(s)
1E-2
1E-1
1E+0
t(s)
1E-2
1E-1
1E+0
Fig. 4-1:
Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AB and D
2
PAK).
Fig. 4-2:
Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
T
δ
= 0.5
0.6
0.4
δ
= 0.5
T
0.2
δ
= 0.2
δ
= 0.1
Single pulse
0.2
tp(s)
1E-3
1E-2
δ
=tp/T
tp
δ
= 0.2
δ
= 0.1
Single pulse
tp(s)
1E-2
1E-1
δ
=tp/T
tp
0.0
1E-4
1E-1
1E+0
0.0
1E-3
1E+0
1E+1
3/7
STMICROELECTRONICS [ STMICROELECTRONICS ]
