Electrical characteristics
STB75NF75 - STP75NF75 - STP75NF75FP
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 40A
2
3
Min.
75
1
10
±100
4
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
0.0095 0.011
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 15V, I
D
= 40A
V
DS
=25V, f = 1 MHz,
V
GS
= 0
Min.
Typ.
20
3700
730
240
117
27
47
160
Max.
Unit
S
pF
pF
pF
nC
nC
nC
V
DD
= 60V, I
D
= 80A
V
GS
=10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/16
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