STB75NF75 - STP75NF75 - STP75NF75FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D (1)
I
D(1)
I
DM(2)
P
TOT
Absolute maximum ratings
Value
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20KΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
80
70
320
300
2.0
12
700
--
-55 to 175
2000
D
2
PAK
Unit
/TO-220
75
75
± 20
80
70
320
45
0.3
TO-220FP
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
dv/dt
(3)
Peak diode recovery voltage slope
E
AS (4)
V
ISO
T
J
T
stg
Single pulse avalanche energy
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t=1s;T
C
=25°C)
Operating junction temperature
Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I
SD
≤
80A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
4.
Starting T
J
= 25
o
C, I
D
= 40A, V
DD
= 37.5V
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal data
Value
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
(1)
D PAK /TO-220
0.5
62.5
300
2
Unit
TO-220FP
3.33
°C/W
°C/W
°C
1. 1.6mm from case for 10sec)
3/16
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