STP6NK60Z - STP6NK60ZFP - STB6NK60Z - STB6NK60Z-1
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 100µA
V
GS
= 10V, I
D
= 3 A
3
3.75
1
Min.
600
1
50
±10
4.5
1.2
Typ.
Max.
Unit
V
µA
µA
µA
V
Ω
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
C
oss eq.
(3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DS
= 8 V
,
I
D
= 3 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
5
905
115
25
56
Max.
Unit
S
pF
pF
pF
pF
V
GS
= 0V, V
DS
= 0V to 480V
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Test Conditions
V
DD
= 300 V, I
D
= 3 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 6 A,
V
GS
= 10V
Min.
Typ.
14
14
33
6
17
46
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Parameter
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 300 V, I
D
= 3 A
R
G
= 4.7Ω V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 6 A,
R
G
= 4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
47
19
16
16
29
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 6 A, V
GS
= 0
I
SD
= 6 A, di/dt = 100A/µs
V
DD
= 50 V, T
j
= 150°C
(see test circuit, Figure 5)
445
2.7
12
Test Conditions
Min.
Typ.
Max.
6
24
1.6
Unit
A
A
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
3/13
STMICROELECTRONICS [ STMICROELECTRONICS ]
