N-CHANNEL 60V - 0.012
Ω
- 60A TO-220/TO-220FP/D
2
PAK
STripFET™ II POWER MOSFET
TYPE
STB60NF06L
STP60NF06L
STP60NF06LFP
s
s
s
s
STB60NF06L
STP60NF06L STP60NF06LFP
V
DSS
60 V
60 V
60 V
R
DS(on)
<0.014
Ω
<0.014
Ω
<0.014
Ω
I
D
60 A
60 A
60 A(*)
3
1
2
s
s
s
TYPICAL R
DS
(on) = 0.012Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
175
o
C OPERATING RANGE
LOW THRESHOLD DRIVE
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
3
1
TO-220FP
D
2
PAK
TO-263
(Suffix “T4”)
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STB60NF06L
STP60NF06L
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
due to Rth value
Value
STP60NF06LFP
60
60
± 15
60
42
240
110
0.73
20
320
------
-55 to 175
(1) I
SD
≤
60A, di/dt
≤
600A/µs, V
DD
≤
48V, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 30V
Unit
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
60(*)
42(*)
240(*)
30
0.2
2000
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
(•)
Pulse width limited by safe operating area.
(*)
Refer to SOA for the max allowable current values on FP-type
July 2003
.
1/11
STMICROELECTRONICS [ STMICROELECTRONICS ]
