Electrical characteristics
STN951
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
Collector cut-off current
V
I
= -60V
CB
-0.1
-0.1
µA
µA
CBO
(I =0)
E
Emitter cut-off current
I
V
= -5V
EB
EBO
(I =0)
C
Collector-base
Breakdown voltage
(2)
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I = -100µA
-60
-60
-6
V
V
V
C
(I =0)
E
Collector-emitter
Breakdown voltage
(2)
(2)
I = -10mA
C
(I =0)
B
Collector-base
Breakdown voltage
I = -100µA
E
(I =0)
C
I = -100mA I = -5mA
-50
mV
mV
mV
mV
-10
-70
C
B
(2)
-120
-250
-500
I = -1A
I = -50mA
V
C
B
Collector-emitter
saturation voltage
CE(sat)
BE(sat)
I = -2A
I = -50mA
-140
-350
C
B
I = -5A
I = -200mA
C
B
Base-emitter saturation
voltage
(2)
I = -4A
I = -200mA
-1
-1.15
-1
V
V
V
C
B
(2)
I = -4A
V
V
= -1V
Base-emitter on voltage
-0.89
V
C
CE
CE
BE(on)
I = -10mA
= -1V
= -1V
150
150
65
300
270
90
C
I = -2A
V
CE
350
C
(2)
DC current gain
h
FE
I = -5A
V
V
= -1V
= -1V
C
CE
CE
I = -10A
10
25
C
f
V
V
= -10V
= -10V
I = -100mA
Transition frequency
130
60
MHz
pF
T
CE
CB
C
Collector-base
capacitance
C
f = 1MHz
CBO
Resistive load
Turn-on time
Storage time
Fall time
80
600
70
ns
ns
ns
t
I = -1A
V
= -30V
on
C
CC
t
I
I
= -0.1A
s
B1 = - B2
t
f
Note (2) Pulsed duration = 300 µs, duty cycle ≤1.5%
4/8
STMICROELECTRONICS [ ST ]
