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STM8S207R8T6BTR 参数 Datasheet PDF下载

STM8S207R8T6BTR图片预览
型号: STM8S207R8T6BTR
PDF下载: 下载PDF文件 查看货源
内容描述: 性能线, 24兆赫STM8S 8位MCU ,高达128 KB闪存,集成的EEPROM , 10位ADC ,定时器, 2个UART , SPI , I²C , CAN [Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 103 页 / 1740 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM8S207xx, STM8S208xx  
Table 38. Output driving current (standard ports)  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Output low level with 8 pins sunk  
Output low level with 4 pins sunk  
IIO = 10 mA, VDD = 5 V  
IIO = 4 mA, VDD = 3.3 V  
2
VOL  
V
1(1)  
Output high level with 8 pins sourced IIO = 10 mA, VDD = 5 V  
Output high level with 4 pins sourced IIO = 4 mA, VDD = 3.3 V  
2.8  
VOH  
V
2.1(1)  
1. Data based on characterization results, not tested in production  
Table 39. Output driving current (true open drain ports)  
Symbol  
Parameter  
Conditions  
Max  
Unit  
I
IO = 10 mA, VDD = 5 V  
1
VOL  
Output low level with 2 pins sunk  
IIO = 10 mA, VDD = 3.3 V  
IIO = 20 mA, VDD = 5 V  
1.5(1)  
2(1)  
V
1. Data based on characterization results, not tested in production  
Table 40. Output driving current (high sink ports)  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Output low level with 8 pins sunk  
Output low level with 4 pins sunk  
Output low level with 4 pins sunk  
Output high level with 8 pins sourced  
Output high level with 4 pins sourced  
Output high level with 4 pins sourced  
IIO = 10 mA,VDD = 5 V  
IIO = 10 mA,VDD = 3.3 V  
IIO = 20 mA,VDD = 5 V  
IIO = 10 mA, VDD = 5 V  
IIO = 10 mA, VDD = 3.3 V  
IIO = 20 mA, VDD = 5 V  
0.8  
1(1)  
VOL  
1.5(1)  
V
4.0  
VOH  
2.1(1)  
3.3(1)  
1. Data based on characterization results, not tested in production  
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Doc ID 14733 Rev 9