STM8S207xx, STM8S208xx
Electrical characteristics
10.3.5
Memory characteristics
RAM and hardware registers
Table 35. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
(2)
VRM
Data retention mode(1)
Halt mode (or reset)
VIT-max
V
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
2. Refer to Table 19 on page 57 for the value of VIT-max
.
Flash program memory/data EEPROM memory
General conditions: T = -40 to 125 °C.
A
Table 36. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1) Typ Max
Unit
Operating voltage
(all modes, execution/write/erase)
VDD
fCPU ≤ 24 MHz
2.95
5.5
6.6
V
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
6
ms
tprog
Fast programming time for 1 block
(128 bytes)
3
3
3.3
3.3
ms
ms
Erase time for 1 block (128 bytes)
terase
Erase/write cycles(2)
(program memory)
TA = 85 °C
10 k
NRW
cycles
Erase/write cycles (data memory)(2)
TA = 125 ° C
300 k 1M
20
Data retention (program memory)
after 10 k erase/write cycles at
TA = 85 °C
TRET = 55° C
TRET = 55° C
Data retention (data memory) after 10
k erase/write cycles at TA = 85 °C
tRET
20
1
years
mA
Data retention (data memory) after
300k erase/write cycles at
TA = 125 °C
T
RET = 85° C
Supply current (Flash programming or
erasing for 1 to 128 bytes)
IDD
2
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
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