STM8S105xx
Electrical characteristics
Table 48: EMS data
Conditions
Symbol Parameter
Level/
class
VFESD Voltage limits to be
applied on any I/O pin to
induce a functional
2/B (1)
VDD = 3.3 V, TA = 25 °C, fMASTER = 16 MHz
(HSI clock), conforming to IEC 61000-4-2
disturbance
VEFTB
Fast transient voltage
burst limits to be applied
through 100 pF on VDD
and VSS pins to induce a
functional disturbance
4/A (1)
VDD= 3.3 V, TA = 25 °C ,fMASTER = 16 MHz
(HSI clock),conforming to IEC 61000-4-4
(1)Data obtained with HSI clock configuration, after applying HW recommendations described
in AN2860 (EMC guidelines for STM8S microcontrollers).
10.3.12.3 Electromagnetic interference (EMI)
Emission tests conform to the IEC61967-2 standard for test software, board layout and pin
loading.
Table 49: EMI data
Symbol Parameter Conditions
Unit
(1)
General
conditions
Monitored
frequency
band
Max fHSE/fCPU
8 MHz/ 8
MHz
8 MHz/ 16
MHz
SEMI
Peak level VDD = 5 V,
TA = +25 °C,
0.1 MHz to
30 MHz
13
23
14
19
-4
dBµV
LQFP48
package
conforming to
IEC61967-2
30 MHz to
130 MHz
130 MHz to 1 -4
GHz
SAE EMI
level
2
1.5
—
(1) Data based on characterization results, not tested in production.
DocID14771 Rev 9
103/127
STMICROELECTRONICS [ ST ]
