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STM8S003F3P6 参数 Datasheet PDF下载

STM8S003F3P6图片预览
型号: STM8S003F3P6
PDF下载: 下载PDF文件 查看货源
内容描述: 价值线, 16兆赫STM8S 8位MCU , 8 KB闪存, 128字节的数据EEPROM , 10位ADC , 3个定时器, UART , SPI , I& SUP2 ; ç [Value line, 16 MHz STM8S 8-bit MCU, 8 Kbytes Flash, 128 bytes data EEPROM, 10-bit ADC, 3 timers, UART, SPI, I²C]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 99 页 / 952 K
品牌: STMICROELECTRONICS [ ST ]
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STM8S003K3 STM8S003F3  
Electrical characteristics  
Conditions  
(1)  
Max fHSE/fCPU  
Symbol Parameter  
Unit  
General  
Monitored  
16 MHz/ 16 MHz/  
conditions  
frequency band  
8 MHz  
16 MHz  
Conforming to 130 MHz  
SAE IEC  
61967-2  
130 MHz to  
5
5
1 GHz  
SAE EMI  
level  
2.5  
2.5  
SAE EMI level  
(1) Data based on characterisation results, not tested in production.  
9.3.11.4 Absolute maximum ratings (electrical sensitivity)  
Based on three different tests (ESD, DLU and LU) using specific measurement methods, the  
product is stressed to determine its performance in terms of electrical sensitivity. For more  
details, refer to the application note AN1181.  
9.3.11.5 Electrostatic discharge (ESD)  
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied  
to the pins of each sample according to each pin combination. The sample size depends on  
the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated:  
Human body model. This test conforms to the JESD22-A114A/A115A standard. For more  
details, refer to the application note AN1181.  
Table 49: ESD absolute maximum ratings  
Symbol  
Ratings  
Conditions  
Class Maximum Unit  
value(1)  
VESD(HBM)  
Electrostatic discharge  
voltage  
TA = 25°C, conforming to  
JESD22-A114  
A
4000  
1000  
(Human body model)  
V
VESD(CDM)  
Electrostatic discharge  
voltage  
TA LQFP32 package =  
25°C, conforming to  
SD22-C101  
IV  
(Charge device model)  
DocID018576 Rev 2  
87/99  
 
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