Electrical characteristics
STM8S003K3 STM8S003F3
Symbol
Ratings
Unit
Max(1)
80
IVSS
IIO
Total current out of VSS ground lines (sink)(2)
Output current sunk by any I/O and control pin
Output current source by any I/Os and control pin
Injected current on NRST pin
20
- 20
± 4
± 4
± 4
± 20
(3) (4)
IINJ(PIN)
Injected current on OSCIN pin
Injected current on any other pin(5)
(3)
ΣI INJ(PIN)
Total injected current (sum of all I/O and control pins)(5)
(1) Data based on characterization results, not tested in production.
(2) All power (VDD) and ground (VSS) pins must always be connected to the external supply.
(3)
I
must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
INJ(PIN)
cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive
injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain
pads, there is no positive injection current, and the corresponding VIN maximum must always be respected
(4) ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins
should be avoided as this significantly reduces the accuracy of the conversion being performed on
another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins
which may potentially inject negative current. Any positive injection current within the limits specified for
IINJ(PIN) and ΣIINJ(PIN) in the I/O port pin characteristics section does not affect the ADC accuracy.
(5) When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum
of the positive and negative injected currents (instantaneous values). These results are based on
characterization with ΣIINJ(PIN) maximum current injection on four I/O port pins of the device.
Table 17: Thermal characteristics
Symbol Ratings
TSTG Storage temperature range
TJ Maximum junction temperature
Value
Unit
-65 to +150
°C
150
48/100
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