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STM32F103R4T6XXX 参数 Datasheet PDF下载

STM32F103R4T6XXX图片预览
型号: STM32F103R4T6XXX
PDF下载: 下载PDF文件 查看货源
内容描述: 基于ARM的低密度高性能线的32位MCU,具有16或32 KB闪存, USB , CAN ,6个定时器, 2的ADC ,6个通信接口 [Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 80 页 / 1067 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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Electrical characteristics
Table 26.
Low-power mode wakeup timings
Parameter
Wakeup from Sleep mode
STM32F103x4, STM32F103x6
Symbol
t
WUSLEEP(1)
t
WUSTOP(1)
t
WUSTDBY(1)
Typ
1.8
3.6
Unit
µs
Wakeup from Stop mode (regulator in run mode)
Wakeup from Stop mode (regulator in low power
mode)
Wakeup from Standby mode
µs
5.4
50
µs
1. The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
5.3.8
PLL characteristics
The parameters given in
Table 27
are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in
Table 9.
Table 27.
Symbol
PLL characteristics
Value
Parameter
PLL input clock
(2)
Min
(1)
1
40
16
Typ
8.0
Max
(1)
25
60
72
200
300
Unit
MHz
%
MHz
µs
ps
f
PLL_IN
f
PLL_OUT
t
LOCK
Jitter
PLL input clock duty cycle
PLL multiplier output clock
PLL lock time
Cycle-to-cycle jitter
1. Based on characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by f
PLL_OUT
.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T
A
=
40 to 105 °C unless otherwise specified.
Table 28.
Symbol
t
prog
t
ERASE
t
ME
Flash memory characteristics
Parameter
Conditions
Min
(1)
40
20
20
Typ
52.5
Max
(1)
70
40
40
Unit
µs
ms
ms
16-bit programming time T
A
�½–40
to +105 °C
Page (1 KB) erase time
Mass erase time
T
A
�½–40
to +105 °C
T
A
�½–40
to +105 °C
48/80
Doc ID 15060 Rev 3