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STM32F103R4T6XXX 参数 Datasheet PDF下载

STM32F103R4T6XXX图片预览
型号: STM32F103R4T6XXX
PDF下载: 下载PDF文件 查看货源
内容描述: 基于ARM的低密度高性能线的32位MCU,具有16或32 KB闪存, USB , CAN ,6个定时器, 2的ADC ,6个通信接口 [Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 80 页 / 1067 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F103x4, STM32F103x6  
Electrical characteristics  
Table 20. High-speed external user clock characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
User external clock source  
frequency(1)  
fHSE_ext  
1
8
25  
MHz  
VHSEH  
VHSEL  
tw(HSE)  
OSC_IN input pin high level voltage  
OSC_IN input pin low level voltage  
0.7VDD  
VSS  
VDD  
V
0.3VDD  
OSC_IN high or low time(1)  
OSC_IN rise or fall time(1)  
16  
45  
tw(HSE)  
ns  
tr(HSE)  
tf(HSE)  
20  
Cin(HSE) OSC_IN input capacitance(1)  
5
pF  
%
DuCy(HSE) Duty cycle  
55  
1
IL  
OSC_IN Input leakage current  
VSS VIN VDD  
µA  
1. Guaranteed by design, not tested in production.  
Low-speed external user clock generated from an external source  
The characteristics given in Table 21 result from tests performed using an low-speed  
external clock source, and under ambient temperature and supply voltage conditions  
summarized in Table 9.  
Table 21. Low-speed external user clock characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
User External clock source  
frequency(1)  
fLSE_ext  
32.768  
1000  
kHz  
OSC32_IN input pin high level  
voltage  
VLSEH  
VLSEL  
0.7VDD  
VSS  
VDD  
V
OSC32_IN input pin low level  
voltage  
0.3VDD  
tw(LSE)  
tw(LSE)  
OSC32_IN high or low time(1)  
OSC32_IN rise or fall time(1)  
450  
ns  
tr(LSE)  
tf(LSE)  
50  
Cin(LSE) OSC32_IN input capacitance(1)  
5
pF  
%
DuCy(LSE) Duty cycle  
30  
70  
1
OSC32_IN Input leakage  
current  
IL  
VSS VIN VDD  
µA  
1. Guaranteed by design, not tested in production.  
Doc ID 15060 Rev 3  
43/80  
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