STM32F103x4, STM32F103x6
Table 28.
Symbol
Electrical characteristics
Flash memory characteristics (continued)
Parameter
Conditions
Read mode
f
HCLK
= 72 MHz with 2 wait
states, V
DD
= 3.3 V
Min
(1)
Typ
Max
(1)
20
Unit
mA
I
DD
Supply current
Write / Erase modes
f
HCLK
= 72 MHz, V
DD
= 3.3 V
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
5
50
2
3.6
mA
µA
V
V
prog
Programming voltage
1. Guaranteed by design, not tested in production.
Table 29.
Symbol
Flash memory endurance and data retention
Value
Parameter
Conditions
Min
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
1 kcycle
(2)
at T
A
= 85 °C
1 kcycle
(2)
at T
A
= 105 °C
10 kcycles
(2)
at T
A
= 55 °C
(1)
Unit
Typ
Max
kcycles
N
END
Endurance
10
30
10
20
t
RET
Data retention
Years
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
Electrostatic discharge (ESD)
(positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB:
A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in
Table 30.
They are based on the EMS levels and classes
defined in application note AN1709.
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