Revision history
STM32F103x8, STM32F103xB
8
Revision history
Table 58.
Date
01-jun-2007
Document revision history
Revision
1
Initial release.
Flash memory size modified in
Note 8, Note 5, Note 7, Note 9
and
BGA100 pins added to
added.
T
HSE
changed to T
LSE
in
V
BAT
ranged modified in
t
SU(LSE)
changed to t
SU(HSE)
in
I
DD(HSI)
max value added to
Sample size modified and machine model removed in
Electrostatic
discharge (ESD).
Number of parts modified and standard reference updated in
25 °C and 85 °C conditions removed and class name modified
in
R
PU
and R
PD
min and max values
added to
R
PU
min and max values
added to
and
corrected.
Notes removed below
I
DD
typical values changed in
Table 11: Maximum current consumption
in Run and Sleep modes. Table 38: TIMx characteristics
modified.
t
STAB
, V
REF+
value, t
lat
and f
TRIG
added to
In
typical
endurance and data retention for T
A
= 85 °C added, data retention for
T
A
= 25 °C removed.
V
BG
changed to V
REFINT
in
Document title changed.
section modified.
modified.
list optimized. Small text changes.
Changes
20-Jul-2007
2
86/92
Doc ID 13587 Rev 11
STMICROELECTRONICS [ STMICROELECTRONICS ]
