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STM32F103RET6TR 参数 Datasheet PDF下载

STM32F103RET6TR图片预览
型号: STM32F103RET6TR
PDF下载: 下载PDF文件 查看货源
内容描述: 高密度高性能线的基于ARM的32位MCU,具有256至512KB闪存, USB , CAN ,11个定时器, 3的ADC ,13个通信接口 [High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 123 页 / 1691 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F103xC, STM32F103xD, STM32F103xE  
Low-speed internal (LSI) RC oscillator  
Electrical characteristics  
(1)  
Table 26. LSI oscillator characteristics  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
(2)  
fLSI  
Frequency  
30  
40  
60  
85  
kHz  
µs  
(3)  
tsu(LSI)  
LSI oscillator startup time  
(3)  
IDD(LSI)  
LSI oscillator power consumption  
0.65  
1.2  
µA  
1.  
VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.  
2. Based on characterization, not tested in production.  
3. Guaranteed by design, not tested in production.  
Wakeup time from low-power mode  
The wakeup times given in Table 27 is measured on a wakeup phase with a 8-MHz HSI RC  
oscillator. The clock source used to wake up the device depends from the current operating  
mode:  
Stop or Standby mode: the clock source is the RC oscillator  
Sleep mode: the clock source is the clock that was set before entering Sleep mode.  
All timings are derived from tests performed under ambient temperature and V supply  
DD  
voltage conditions summarized in Table 10.  
Table 27. Low-power mode wakeup timings  
Symbol  
Parameter  
Wakeup from Sleep mode  
Typ  
Unit  
(1)  
1.8  
µs  
tWUSLEEP  
Wakeup from Stop mode (regulator in run mode)  
3.6  
5.4  
(1)  
µs  
µs  
tWUSTOP  
Wakeup from Stop mode (regulator in low power mode)  
(1)  
Wakeup from Standby mode  
50  
tWUSTDBY  
1. The wakeup times are measured from the wakeup event to the point in which the user application code  
reads the first instruction.  
Doc ID 14611 Rev 7  
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