Revision history
STM32F103x8, STM32F103xB
8
Revision history
Table 59. Document revision history
Date
Revision
Changes
01-jun-2007
1
Initial release.
Flash memory size modified in Note 8, Note 5, Note 7, Note 9 and
BGA100 pins added to Table 5: Medium-density STM32F103xx pin
definitions. Figure 3: STM32F103xx performance line LFBGA100
ballout added.
THSE changed to TLSE in Figure 22: Low-speed external clock source
AC timing diagram. VBAT ranged modified in Power supply schemes.
tSU(LSE) changed to tSU(HSE) in Table 22: HSE 4-16 MHz oscillator
characteristics. IDD(HSI) max value added to Table 24: HSI oscillator
characteristics.
Sample size modified and machine model removed in Electrostatic
discharge (ESD).
Number of parts modified and standard reference updated in Static
latch-up. 25 °C and 85 °C conditions removed and class name modified
in Table 33: Electrical sensitivities. RPU and RPD min and max values
added to Table 34: I/O static characteristics. RPU min and max values
added to Table 37: NRST pin characteristics.
Figure 31: I2C bus AC waveforms and measurement circuit and
Figure 30: Recommended NRST pin protection corrected.
20-Jul-2007
2
Notes removed below Table 9, Table 37, Table 43.
IDD typical values changed in Table 11: Maximum current consumption
in Run and Sleep modes. Table 38: TIMx characteristics modified.
tSTAB, VREF+ value, tlat and fTRIG added to Table 45: ADC
characteristics.
In Table 29: Flash memory endurance and data retention, typical
endurance and data retention for TA = 85 °C added, data retention for
TA = 25 °C removed.
VBG changed to VREFINT in Table 12: Embedded internal reference
voltage. Document title changed. Controller area network (CAN)
section modified.
Figure 13: Power supply scheme modified.
Features on page 1 list optimized. Small text changes.
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Doc ID 13587 Rev 12