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STM32F103RBU6TR 参数 Datasheet PDF下载

STM32F103RBU6TR图片预览
型号: STM32F103RBU6TR
PDF下载: 下载PDF文件 查看货源
内容描述: 中密度高性能线的基于ARM的32位MCU,具有64或128 KB的闪存, USB , CAN ,7个定时器, 2的ADC ,9个通信接口 [Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 92 页 / 1212 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F103x8, STM32F103xB  
Table 58. Document revision history (continued)  
Revision history  
Date  
Revision  
Changes  
Figure 2: Clock tree on page 20 added.  
Maximum TJ value given in Table 8: Thermal characteristics on  
page 35.  
CRC feature added (see CRC (cyclic redundancy check) calculation  
unit on page 9 and Figure 9: Memory map on page 31 for address).  
IDD modified in Table 16: Typical and maximum current consumptions in  
Stop and Standby modes.  
ACCHSI modified in Table 24: HSI oscillator characteristics on page 52,  
note 2 removed.  
PD, TA and TJ added, tprog values modified and tprog description clarified  
in Table 28: Flash memory characteristics on page 53.  
tRET modified in Table 29: Flash memory endurance and data retention.  
14-Mar-2008  
5
VNF(NRST) unit corrected in Table 37: NRST pin characteristics on  
page 60.  
Table 41: SPI characteristics on page 64 modified.  
IVREF added to Table 45: ADC characteristics on page 68.  
Table 47: ADC accuracy - limited test conditions added. Table 48: ADC  
accuracy modified.  
LQFP100 package specifications updated (see Section 6: Package  
characteristics on page 73).  
Recommended LQFP100, LQFP 64, LQFP48 and VFQFPN36  
footprints added (see Figure 40, Figure 42, Figure 46 and Figure 36).  
Section 6.2: Thermal characteristics on page 82 modified,  
Section 6.2.1 and Section 6.2.2 added.  
Appendix A: Important notes on page 81 removed.  
Small text changes. Figure 9: Memory map clarified.  
In Table 29: Flash memory endurance and data retention:  
– NEND tested over the whole temperature range  
– cycling conditions specified for tRET  
21-Mar-2008  
6
– tRET min modified at TA = 55 °C  
V25, Avg_Slope and TL modified in Table 49: TS characteristics.  
CRC feature removed.  
CRC feature added back. Small text changes. Section 1: Introduction  
modified. Section 2.2: Full compatibility throughout the family added.  
IDD at TA max = 105 °C added to Table 16: Typical and maximum  
current consumptions in Stop and Standby modes on page 42.  
IDD_VBAT removed from Table 21: Typical current consumption in  
Standby mode on page 47.  
Values added to Table 40: SCL frequency (fPCLK1= 36 MHz.,VDD =  
3.3 V) on page 63.  
22-May-2008  
7
Figure 27: SPI timing diagram - slave mode and CPHA = 0 on page 65  
modified. Equation 1 corrected.  
tRET at TA = 105 °C modified in Table 29: Flash memory endurance and  
data retention on page 54.  
VUSB added to Table 43: USB DC electrical characteristics on page 67.  
Figure 47: LQFP100 PD max vs. TA on page 84 modified.  
Axx option added to Table 57: Ordering information scheme on  
page 85.  
Doc ID 13587 Rev 11  
89/92