STM32F103x4, STM32F103x6
Electrical characteristics
High-speed internal (HSI) RC oscillator
Table 24.
Symbol
f
HSI
HSI oscillator characteristics
(1)
Parameter
Frequency
User-trimmed with the RCC_CR
register
(2)
Conditions
Min
Typ
8
1
(3)
–2
–1.5
–1.3
–1.1
1
80
2.5
2.2
2
1.8
2
100
Max
Unit
MHz
%
%
%
%
%
µs
µA
ACC
HSI
Accuracy of the HSI
oscillator
Factory-
calibrated
(4)
T
A
= –40 to 105 °C
T
A
= –10 to 85 °C
T
A
= 0 to 70 °C
T
A
= 25 °C
t
su(HSI)(4)
I
DD(HSI)(4)
HSI oscillator
startup time
HSI oscillator power
consumption
1. V
DD
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
3. Guaranteed by design, not tested in production.
4. Based on characterization, not tested in production.
Low-speed internal (LSI) RC oscillator
Table 25.
Symbol
f
LSI(2)
t
su(LSI)(3)
I
DD(LSI)(3)
Frequency
LSI oscillator startup time
LSI oscillator power consumption
0.65
LSI oscillator characteristics
(1)
Parameter
Min
30
Typ
40
Max
60
85
1.2
Unit
kHz
µs
µA
1. V
DD
= 3 V, T
A
= –40 to 105 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Wakeup time from low-power mode
The wakeup times given in
Table 26
is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
●
●
Stop or Standby mode: the clock source is the RC oscillator
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and V
DD
supply
voltage conditions summarized in
Table 9.
Doc ID 15060 Rev 3
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