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STM32F103CBH6XXX 参数 Datasheet PDF下载

STM32F103CBH6XXX图片预览
型号: STM32F103CBH6XXX
PDF下载: 下载PDF文件 查看货源
内容描述: 中密度高性能线的基于ARM的32位MCU,具有64或128 KB的闪存, USB , CAN ,7个定时器, 2的ADC ,9个通信接口 [Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 92 页 / 1212 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F103x8, STM32F103xB  
Electrical characteristics  
Table 11. Embedded reset and power control block characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ Max Unit  
PLS[2:0]=000 (rising edge)  
PLS[2:0]=000 (falling edge)  
PLS[2:0]=001 (rising edge)  
PLS[2:0]=001 (falling edge)  
PLS[2:0]=010 (rising edge)  
PLS[2:0]=010 (falling edge)  
PLS[2:0]=011 (rising edge)  
PLS[2:0]=011 (falling edge)  
PLS[2:0]=100 (rising edge)  
PLS[2:0]=100 (falling edge)  
PLS[2:0]=101 (rising edge)  
PLS[2:0]=101 (falling edge)  
PLS[2:0]=110 (rising edge)  
PLS[2:0]=110 (falling edge)  
PLS[2:0]=111 (rising edge)  
PLS[2:0]=111 (falling edge)  
2.1  
2
2.18 2.26  
2.08 2.16  
V
V
2.19 2.28 2.37  
2.09 2.18 2.27  
2.28 2.38 2.48  
2.18 2.28 2.38  
2.38 2.48 2.58  
2.28 2.38 2.48  
2.47 2.58 2.69  
2.37 2.48 2.59  
2.57 2.68 2.79  
2.47 2.58 2.69  
V
V
V
V
V
V
Programmable voltage  
detector level selection  
VPVD  
V
V
V
V
2.66 2.78  
2.56 2.68  
2.76 2.88  
2.66 2.78  
100  
2.9  
2.8  
3
V
V
V
2.9  
V
(2)  
VPVDhyst  
PVD hysteresis  
mV  
V
1.8(1)  
Falling edge  
Rising edge  
1.88 1.96  
Power on/power down  
reset threshold  
VPOR/PDR  
1.84 1.92  
40  
2.0  
V
(2)  
VPDRhyst  
PDR hysteresis  
mV  
ms  
(2)  
TRSTTEMPO  
Reset temporization  
1
2.5  
4.5  
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.  
2. Guaranteed by design, not tested in production.  
Doc ID 13587 Rev 11  
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