Electrical characteristics
STM32F103x8, STM32F103xB
High-speed internal (HSI) RC oscillator
(1)
Table 24. HSI oscillator characteristics
Symbol
Parameter
Frequency
Conditions
Min
Typ
Max Unit
fHSI
8
MHz
User-trimmed with the RCC_CR
register(2)
1(3)
%
TA = –40 to 105 °C
–2
2.5
2.2
2
%
%
%
%
Accuracy of the HSI
oscillator
ACCHSI
TA = –10 to 85 °C
Factory-
–1.5
–1.3
–1.1
calibrated(4)
TA = 0 to 70 °C
TA = 25 °C
1.8
HSI oscillator
startup time
(4)
tsu(HSI)
1
2
µs
HSI oscillator power
consumption
(4)
IDD(HSI)
80
100
µA
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
3. Guaranteed by design, not tested in production.
4. Based on characterization, not tested in production.
Low-speed internal (LSI) RC oscillator
(1)
Table 25. LSI oscillator characteristics
Symbol
Parameter
Typ
Max
Unit
Min
(2)
fLSI
Frequency
30
40
60
85
kHz
µs
(3)
tsu(LSI)
LSI oscillator startup time
(3)
IDD(LSI)
LSI oscillator power consumption
0.65
1.2
µA
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Wakeup time from low-power mode
The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
●
Stop or Standby mode: the clock source is the RC oscillator
●
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and V supply
DD
voltage conditions summarized in Table 9.
52/92
Doc ID 13587 Rev 11
STMICROELECTRONICS [ ST ]
