Electrical characteristics
STM32F103x8, STM32F103xB
Table 9.
Symbol
General operating conditions (continued)
Parameter
Conditions
Min
Max
Unit
LFBGA100
454
434
308
444
363
1110
85
LQFP100
Power dissipation at TA = 85 °C
for suffix 6 or TA = 105 °C for
suffix 7(3)
TFBGA64
PD
mW
LQFP64
LQFP48
VFQFPN36
Maximum power dissipation
Low power dissipation(4)
Maximum power dissipation
Low power dissipation(4)
6 suffix version
7 suffix version
–40
–40
–40
–40
–40
–40
Ambient temperature for 6
suffix version
°C
°C
°C
105
105
125
105
125
TA
TJ
Ambient temperature for 7
suffix version
Junction temperature range
1. When the ADC is used, refer to Table 45: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 82).
4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 82).
5.3.2
5.3.3
Operating conditions at power-up / power-down
Subject to general operating conditions for T .
A
Table 10. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
VDD rise time rate
VDD fall time rate
0
tVDD
µs/V
20
Embedded reset and power control block characteristics
The parameters given in Table 11 are derived from tests performed under ambient
temperature and V supply voltage conditions summarized in Table 9.
DD
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Doc ID 13587 Rev 11
STMICROELECTRONICS [ ST ]
