欢迎访问ic37.com |
会员登录 免费注册
发布采购

STM32F107VCT6TR 参数 Datasheet PDF下载

STM32F107VCT6TR图片预览
型号: STM32F107VCT6TR
PDF下载: 下载PDF文件 查看货源
内容描述: [Mainstream Connectivity line, ARM Cortex-M3 MCU with 256 Kbytes Flash, 72 MHz CPU, Ethernet MAC, CAN and USB 2.0 OTG]
分类和应用: 闪存
文件页数/大小: 103 页 / 1881 K
品牌: STMICROELECTRONICS [ ST ]
 浏览型号STM32F107VCT6TR的Datasheet PDF文件第32页浏览型号STM32F107VCT6TR的Datasheet PDF文件第33页浏览型号STM32F107VCT6TR的Datasheet PDF文件第34页浏览型号STM32F107VCT6TR的Datasheet PDF文件第35页浏览型号STM32F107VCT6TR的Datasheet PDF文件第37页浏览型号STM32F107VCT6TR的Datasheet PDF文件第38页浏览型号STM32F107VCT6TR的Datasheet PDF文件第39页浏览型号STM32F107VCT6TR的Datasheet PDF文件第40页  
Electrical characteristics  
STM32F105xx, STM32F107xx  
5.3.2  
Operating conditions at power-up / power-down  
Subject to general operating conditions for T .  
A
Table 10. Operating conditions at power-up / power-down  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VDD rise time rate  
0
tVDD  
µs/V  
V
DD fall time rate  
20  
5.3.3  
Embedded reset and power control block characteristics  
The parameters given in Table 11 are derived from tests performed under ambient  
temperature and V supply voltage conditions summarized in Table 9.  
DD  
Table 11. Embedded reset and power control block characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ Max Unit  
PLS[2:0]=000 (rising edge)  
PLS[2:0]=000 (falling edge)  
PLS[2:0]=001 (rising edge)  
PLS[2:0]=001 (falling edge)  
PLS[2:0]=010 (rising edge)  
PLS[2:0]=010 (falling edge)  
PLS[2:0]=011 (rising edge)  
PLS[2:0]=011 (falling edge)  
PLS[2:0]=100 (rising edge)  
PLS[2:0]=100 (falling edge)  
PLS[2:0]=101 (rising edge)  
PLS[2:0]=101 (falling edge)  
PLS[2:0]=110 (rising edge)  
PLS[2:0]=110 (falling edge)  
PLS[2:0]=111 (rising edge)  
PLS[2:0]=111 (falling edge)  
2.1  
2
2.18 2.26  
2.08 2.16  
V
V
2.19 2.28 2.37  
2.09 2.18 2.27  
2.28 2.38 2.48  
2.18 2.28 2.38  
2.38 2.48 2.58  
2.28 2.38 2.48  
2.47 2.58 2.69  
2.37 2.48 2.59  
2.57 2.68 2.79  
2.47 2.58 2.69  
V
V
V
V
V
V
Programmable voltage  
detector level selection  
VPVD  
V
V
V
V
2.66 2.78  
2.56 2.68  
2.76 2.88  
2.66 2.78  
100  
2.9  
2.8  
3
V
V
V
2.9  
V
(2)  
VPVDhyst  
PVD hysteresis  
mV  
V
1.8(1)  
Falling edge  
Rising edge  
1.88 1.96  
Power on/power down  
reset threshold  
VPOR/PDR  
1.84 1.92  
40  
2.0  
V
(2)  
VPDRhyst  
PDR hysteresis  
mV  
ms  
(2)  
TRSTTEMPO  
Reset temporization  
1
2.5  
4.5  
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.  
2. Guaranteed by design, not tested in production.  
36/104  
Doc ID 15274 Rev 6  
 
 复制成功!