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STM32F103C8T7 参数 Datasheet PDF下载

STM32F103C8T7图片预览
型号: STM32F103C8T7
PDF下载: 下载PDF文件 查看货源
内容描述: 中密度高性能线的基于ARM的32位MCU,具有64或128 KB的闪存, USB , CAN ,7个定时器, 2的ADC , 9融为一体。接口 [Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces]
分类和应用: 闪存
文件页数/大小: 105 页 / 1316 K
品牌: STMICROELECTRONICS [ ST ]
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Revision history  
Table 61. Document revision history (continued)  
STM32F103x8, STM32F103xB  
Date  
Revision  
Changes  
I/O information clarified on page 1.  
Figure 3: STM32F103xx performance line LFBGA100 ballout modified.  
Figure 11: Memory map modified. Table 4: Timer feature comparison  
added.  
PB4, PB13, PB14, PB15, PB3/TRACESWO moved from Default column  
to Remap column in Table 5: Medium-density STM32F103xx pin  
definitions.  
PD for LFBGA100 corrected in Table 9: General operating conditions.  
Note modified in Table 13: Maximum current consumption in Run mode,  
code with data processing running from Flash and Table 15: Maximum  
current consumption in Sleep mode, code running from Flash or RAM.  
23-Apr-2009  
10  
Table 20: High-speed external user clock characteristics and Table 21:  
Low-speed external user clock characteristics modified.  
Figure 20 shows a typical curve (title modified). ACCHSI max values  
modified in Table 24: HSI oscillator characteristics.  
TFBGA64 package added (see Table 57 and Table 52). Small text  
changes.  
Note 5 updated and Note 4 added in Table 5: Medium-density  
STM32F103xx pin definitions.  
VRERINT and TCoeff added to Table 12: Embedded internal reference  
voltage. IDD_VBAT value added to Table 16: Typical and maximum current  
consumptions in Stop and Standby modes. Figure 18: Typical current  
consumption on VBAT with RTC on versus temperature at different  
VBAT values added.  
fHSE_ext min modified in Table 20: High-speed external user clock  
characteristics.  
CL1 and CL2 replaced by C in Table 22: HSE 4-16 MHz oscillator  
characteristics and Table 23: LSE oscillator characteristics (fLSE =  
32.768 kHz), notes modified and moved below the tables. Table 24: HSI  
oscillator characteristics modified. Conditions removed from Table 26:  
Low-power mode wakeup timings.  
22-Sep-2009  
11  
Note 1 modified below Figure 24: Typical application with an 8 MHz  
crystal.  
IEC 1000 standard updated to IEC 61000 and SAE J1752/3 updated to  
IEC 61967-2 in Section 5.3.10: EMC characteristics on page 58.  
Jitter added to Table 27: PLL characteristics.  
Table 42: SPI characteristics modified.  
CADC and RAIN parameters modified in Table 46: ADC characteristics.  
RAIN max values modified in Table 47: RAIN max for fADC = 14 MHz.  
Figure 45: LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array  
package outline updated.  
Added STM32F103TB devices.  
Added VFQFPN48 package.  
Updated note 2 below Table 40: I2C characteristics  
Updated Figure 32: I2C bus AC waveforms and measurement circuit  
Updated Figure 31: Recommended NRST pin protection  
Updated Section 5.3.12: I/O current injection characteristics  
03-Jun-2010  
12  
102/105  
Doc ID 13587 Rev 15