Electrical characteristics
STM32F103xC, STM32F103xD, STM32F103xE
5.3.8
PLL characteristics
The parameters given in Table 28 are derived from tests performed under ambient
temperature and V supply voltage conditions summarized in Table 10.
DD
Table 28. PLL characteristics
Value
Symbol
Parameter
Unit
Min
Typ
Max(1)
PLL input clock(2)
1
8.0
25
60
MHz
%
fPLL_IN
PLL input clock duty cycle
PLL multiplier output clock
PLL lock time
40
16
fPLL_OUT
tLOCK
72
MHz
µs
200
300
Jitter
Cycle-to-cycle jitter
ps
1. Based on characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT
.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T = –40 to 105 °C unless otherwise specified.
A
Table 29. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1) Unit
tprog
16-bit programming time TA = –40 to +105 °C
40
20
20
52.5
70
40
40
µs
ms
ms
tERASE Page (2 KB) erase time TA = –40 to +105 °C
tME
Mass erase time
Supply current
TA = –40 to +105 °C
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
28
mA
Write mode
fHCLK = 72 MHz, VDD = 3.3 V
7
5
mA
mA
IDD
Erase mode
fHCLK = 72 MHz, VDD = 3.3 V
Power-down mode / Halt,
50
µA
V
VDD = 3.0 to 3.6 V
Vprog Programming voltage
2
3.6
1. Guaranteed by design, not tested in production.
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