Electrical characteristics
STM32F103xx
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size is
either 3 parts (cumulative mode) or 3 parts × (n + 1) supply pins (non-cumulative mode).
The human body model (HBM) can be simulated. The tests are compliant with JESD22-
A114A standard.
For more details, refer to the application note AN1181.
(1)
Table 27. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum value(2) Unit
Electrostatic discharge voltage
(human body model)
VESD(HBM)
2000
TA = +25 °C
V
Electrostatic discharge voltage
(charge device model)
VESD(CDM)
TBD
1. TBD stands for to be determined.
2. Values based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
■
■
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 28. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +105 °C
II level A
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