STM32F103xx
Electrical characteristics
5.3.7
Internal clock source characteristics
The parameters given in
are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in
High-speed internal (HSI) RC oscillator
Table 19.
Symbol
f
HSI
HSI oscillator characteristics
(1)(2)
Parameter
Frequency
T
A
= –40 to 105 °C
at T
A
= 25°C
TBD
TBD
1
80
Conditions
Min
Typ
8
±3
±1
TBD
TBD
2
100
Max
(3)
Unit
MHz
%
%
µs
µA
ACC
HSI
Accuracy of HSI oscillator
t
su(HSI)
I
DD(HSI)
HSI oscillator start up time
HSI oscillator power
consumption
1. V
DD
= 3.3 V, T
A
=
−
to 105 °C unless otherwise specified.
40
2. TBD stands for to be determined.
3. Values based on device characterization, not tested in production.
LSI Low Speed Internal RC Oscillator
Table 20.
Symbol
f
LSI
t
su(LSI)
I
DD(LSI)
LSI oscillator characteristics
(1)
Parameter
Frequency
LSI oscillator start up time
LSI oscillator power
consumption
0.65
Conditions
Min
30
Typ
Max
(2)
60
85
1.2
Unit
kHz
µs
µA
1. V
DD
= 3 V, T
A
=
−
to 105 °C unless otherwise specified.
40
2. Value based on device characterization, not tested in production.
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