STM32F103xx
Electrical characteristics
5.3.5
Supply current characteristics
The current consumption is measured as described in
Maximum current consumption
The MCU is placed under the following conditions:
●
●
●
All I/O pins are in input mode with a static value at V
DD
or V
SS
(no load)
All peripherals are disabled except if it is explicitly mentioned
The Flash access time is adjusted to f
HCLK
frequency (0 wait state from 0 to 24 MHz, 1
wait state from 24 to 48 MHz and 2 wait states above)
The parameters given in
are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in
Table 11.
Symbol
Maximum current consumption in Run and Sleep modes
(1)
Max
(3)
Parameter
Conditions
F
HCLK
Typ
(2)
T
A
=
85 °C
TBD
TBD
TBD
TBD
T
A
=
105 °C
TBD
TBD
TBD
TBD
Unit
External clock with PLL, code running from
Flash, all peripherals enabled (see RCC
register description):
f
PCLK1
= f
HCLK
/2, f
PCLK2
= f
HCLK
External clock, PLL stopped, code running
from Flash, all peripherals enabled (see RCC
register description):
f
PCLK1
= f
HCLK
/2, f
PCLK2
= f
HCLK
External clock with PLL, code running from
RAM, all peripherals enabled (see RCC
register description):
f
PCLK1
= f
HCLK
/2, f
PCLK2
= f
HCLK
External clock, PLL stopped, code running
from RAM, all peripherals enabled (see RCC
register description):
f
PCLK1
= f
HCLK
/2, f
PCLK2
= f
HCLK
External clock with PLL, code running from
RAM or Flash, all peripherals enabled (see
RCC register description):
f
PCLK1
= f
HCLK
/2, f
PCLK2
= f
HCLK
External clock, PLL stopped, code running
from RAM or Flash, all peripherals enabled
(see RCC register description):
f
PCLK1
= f
HCLK
/2, f
PCLK2
= f
HCLK
72 MHz
48 MHz
36 MHz
24 MHz
36
30
22
21
8 MHz
10
TBD
TBD
mA
Supply
current in
Run mode
72 MHz
48 MHz
36 MHz
24 MHz
32
22
13
11
45
31
18
15
47
33
20
17
I
DD
8 MHz
4.5
TBD
TBD
72 MHz
48 MHz
36 MHz
24 MHz
22
14
13
10
35
23
22
17
37
25
24
19
mA
Supply
current in
Sleep mode
8 MHz
3.5
TBD
TBD
1. TBD stands for to be determined.
2. Typical values are measured at T
A
= 25 °C, and V
DD
= 3.3 V
3. Data based on characterization results, tested in production at V
Dmax
, f
HCLK
max. T
Amax,
and code executed from RAM.
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