®
STW6NA80
STH6NA80FI
N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
STW 6NA80
STH6NA80FI
s
s
s
s
s
s
s
V
DSS
800 V
800 V
R
DS(on)
< 2.2
Ω
< 2.2
Ω
I
D
5.4 A
3.4 A
TYPICAL R
DS(on)
= 1.8
Ω
AVALANCE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
VERY HIGH CURRENT CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
3
2
1
TO-247
ISOWATT218
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
ST W6NA80
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
V
ISO
T
s tg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
Ω
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Un it
STH6NA80F I
800
800
±
30
V
V
V
3.4
2.1
22
60
0.48
4000
A
A
A
W
W /
o
C
V
o
o
5.4
3.4
22
150
1.2
-65 to 150
150
C
C
(•) Pulse width limited by safe operating area
October 1998
1/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
